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| Freescale Semiconductor Technical Data Document Number: MRF21030 Rev. 12, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts Output Power -- 3.5 Watts Power Gain -- 14 dB Efficiency -- 15% * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW Output Power Features * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. MRF21030LR3 MRF21030LSR3 2200 MHz, 30 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF21030LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF21030LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 83.3 0.48 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 2.1 Unit C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF21030LR3 MRF21030LSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 A) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 250 mA) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) 1. Part is internally matched both on input and output. Gps -- 13 -- dB Ciss Coss Crss -- -- -- 98.5 37 1.3 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.3 0.29 2 4 4.5 0.4 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit -- 33 -- % IMD -- - 30 -- dBc IRL -- - 13 -- dB Gps 12 13 -- dB 31 33 -- % IMD -- - 30 - 27.5 dBc IRL -- - 13 -9 dB MRF21030LR3 MRF21030LSR3 2 RF Device Data Freescale Semiconductor VBIAS + C6 C5 B1 B2 VSUPPLY + C12 C13 R1 + C4 C8 C10 C11 R2 L1 RF INPUT L2 RF OUTPUT Z1 Z2 Z3 C2 C1 Z4 Z5 Z6 DUT Z7 Z8 Z9 C9 Z10 C3 C7 B1, B2 C1 C2 C3 C4 C5, C12 C6, C13 C7, C8 C9 C10 C11 L1, L2 R1, R2 Short Ferrite Beads 1 pF Chip Capacitor 4.7 pF Chip Capacitor 0.5 pF Chip Capacitor 3.9 pF Chip Capacitor 0.1 F Chip Capacitors 470 F, 63 V Electrolytic Chip Capacitors 0.3 pF Chip Capacitors 3.6 pF Chip Capacitor 22 F Tantalum Chip Capacitor 5.1 pF Chip Capacitor 12.5 nH Inductors 12 Chip Resistors (1206) Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 PCB 0.153 x 0.087 Microstrip 0.509 x 0.156 Microstrip 0.572 x 0.087 Microstrip 0.509 x 0.232 Microstrip 0.277 x 0.143 Microstrip 0.200 x 0.305 Microstrip 0.200 x 0.511 Microstrip 0.510 x 0.328 Microstrip 0.608 x 0.081 Microstrip Taconic TLX8, 30 mils, r = 2.55 Figure 1. MRF21030LR3(SR3) Test Circuit Schematic C13 + V BIAS C6 C5 R1 B1 C4 WB1 WB2 C2 L1 C10 C8 L2 C7 CUT OUT AREA R2 B2 C12 C11 + VSUPPLY C9 C1 C3 Ground Ground MRF21030 Rev 1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21030LR3(SR3) Test Circuit Component Layout MRF21030LR3 MRF21030LSR3 RF Device Data Freescale Semiconductor 3 TYPICAL CHARACTERISTICS , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 60 50 IRL 40 30 20 10 IMD 0 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 -35 2200 VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA Two-Tone Measurement, 100 kHz Tone Spacing Gps -15 -20 -25 -30 -5 -10 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 30 VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) -20 ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) 25 -30 20 ACPR -40 15 Gps -50 10 -60 5 0 1 3 2 4 5 Pout, OUTPUT POWER (WATTS Avg.) CDMA 6 -70 Figure 3. Class AB Broadband Circuit Performance Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power -25 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, f = 2140 MHz Two-Tone Measurement, -30 100 kHz Tone Spacing -35 -40 -45 -50 -55 1.0 200 mA 250 mA 400 mA 300 mA 350 mA 10 Pout, OUTPUT POWER (WATTS) PEP 100 -20 -30 VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 3rd Order -40 7th Order 5th Order -50 -60 -70 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Intermodulation Distortion versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power 16 15 -22 -24 G ps , POWER GAIN (dB) 15 G ps , POWER GAIN (dB) 400 mA 350 mA 300 mA 250 mA 200 mA VDD = 28 Vdc, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 13 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 14.5 Gps 14 IMD -26 -28 -30 -32 14 13.5 Pout = 30 W (PEP) IDQ = 250 mA, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 22 24 26 28 30 32 -34 -36 -38 34 13 20 VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21030LR3 MRF21030LSR3 4 RF Device Data Freescale Semiconductor Zo = 25 f = 2170 MHz Zload f = 2110 MHz f = 2170 MHz Zsource f = 2110 MHz VDD = 28 V, IDQ = 250 mA, Pout = 30 W PEP f MHz 2110 2140 2170 Zsource 15.3 - j9.4 14.6 - j9.4 14.3 - j8.8 Zload 3.7 - j0.78 3.4 - j0.37 3.0 + j0.13 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF21030LR3 MRF21030LSR3 RF Device Data Freescale Semiconductor 5 NOTES MRF21030LR3 MRF21030LSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 TB M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060.005 (1.520.13) RADIUS OR .06.005 (1.520.13) x 45 CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC B TA M B M TA M B E M ccc C M TA M B M R (LID) F aaa M TA M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc TA M A STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465E - 04 ISSUE F NI - 400 MRF21030LR3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K R C 3 (LID) ccc E M TA M B M N ccc M TA M B M (LID) F A (FLANGE) A T M SEATING PLANE H S (INSULATOR) aaa (FLANGE) M TA M B M (INSULATOR) B B aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF21030LSR3 MRF21030LR3 MRF21030LSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21030LR3 MRF21030LSR3 8Rev. 12, 5/2006 Document Number: MRF21030 RF Device Data Freescale Semiconductor |
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